A new approach to photovoltaic junction formation by using pulse implantation doping technique
نویسندگان
چکیده
2014 The paper presents the first demonstration of a new method of forming photovoltaic p-n junction in silicon by the « Pulse Implantation Doping (PID) » technique. In this technique, an intense ion pulse provides both the dose necessary for doping and the portion of energy required to recrystallize a damage-free, doped surface layer. The ion beam pulses within the range of one microsecond and of a current density within the range of several ka/cm2 are generated by a Rod Plasma Injector 2014 the machine developed at INR 2014 Swierk for the research in controlled ion beam fusion. The best solar cells obtained using a non-optimized PID process with boron as dopant have efficiencies of 4.5-4.7 %, without antireflection coating at AM1 condition. J. Physique 43 (1982) 1353-1358 SEPTEMBRE 1982, :
منابع مشابه
The Effect of Doping and the Thickness of the Layers on CIGS Solar Cell Efficiency
The main problemswith the use of fossil fuels is the restrictions on their access and the detrimental consequences of their use which causes a threat to human health and quality of life. Consequently, the use of other energy sources has become necessary. Renewable Energy as a permanent and clean energy source is an answer to this problem. One such energy source includes photovoltaic solar energ...
متن کاملThin Flexible Crystalline Silicon for Photovoltaics
Preliminary results of a Silicon-On-Insulator to polymer transfer technique capable of producing large area flexible crystalline silicon layer of thicknesses between 0.4 and 2.0 μm, are presented. Formation of a shallow pn junction using ion implantation of Phosphorus was confirmed through capacitance-voltage measurements with further analysis of these results revealing a sharp junction definit...
متن کاملSemiconductor applications of plasma immersion ion implantation
Plasma immersion ion implantation (PIII) is an established technique in certain niche microelectronics applications such as the synthesis of silicon-oninsulator. In other applications such as shallow junction formation by plasma doping, trench doping, and fabrication of blue light emitting materials, PIII has unique advantages over conventional techniques and may be the technique of choice in t...
متن کاملPolymer PN Junction by low Energy Double Implantation Technique
721 Abstract— Polymer base organic PN junction with various ion types was studied. Low-energy ion implantation technique(~keV) is very useful in physical doping on PPP(Polyparaphenylene) polymer. By double implantation, effective organic PN junction was achieved. The best obtained electrical I-V property was rectification ratio which was about 10000. However, still have problems in low junction...
متن کاملRecent developments and applications of plasma immersion ion implantation
Plasma immersion ion implantation ~PIII! is an established technique in some niche microelectronics applications, such as synthesis of silicon on insulator. In other applications, such as shallow junction formation by plasma doping, trench doping, and others, PIII possesses unique advantages over conventional techniques. In the last few years, there have been significant breakthroughs in these ...
متن کامل